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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PMEM4010PD PNP transistor/Schottky diode module
Product data sheet 2002 Oct 28
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
FEATURES * 600 mW total power dissipation * High current capability * Reduces required PCB area * Reduced pick and place costs * Small plastic SMD package. Transistor: * Low collector-emitter saturation voltage. Diode: * Ultra high-speed switching * Very low forward voltage * Guard ring protected.
handbook, halfpage 6
PMEM4010PD
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 3 6
APPLICATIONS * DC/DC convertors * Inductive load drivers * General purpose load drivers * Reverse polarity protection circuits. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4010ND.
Marking code: B2.
5 1
1
2
3
MGU868
Fig.1 Simplified outline (SOT457) and symbol.
2002 Oct 28
2
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC ICM IBM Tj VR IF IFSM Tj Ptot Tstg Tamb Note collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current junction temperature open emitter open base open collector - - - - - - - - - t = 8.3 ms half sinewave; JEDEC method - - Tamb 25 C; note 1 - -65 -65 PARAMETER CONDITIONS MIN.
PMEM4010PD
MAX. -40 -40 -5 -1 -2 -1 150
UNIT
V V V A A A C
Schottky barrier diode continuous reverse voltage continuous forward current non repetitive peak forward current junction temperature 20 1 5 125 V A A C
Combined device total power dissipation storage temperature operating ambient temperature 600 +150 +125 mW C C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 208 UNIT K/W
2002 Oct 28
3
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICBO collector-base cut-off current VCB = -40 V; IE = 0 VCB = -40 V; IE = 0; Tamb = 150 C ICEO IEBO hFE collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = -30 V; IB = 0 VEB = -5 V; IC = 0 VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA VBEsat RCEsat VBEon fT base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency IC = -1 A; IB = -50 mA IC = -500 mA; IB = -50 mA; note 1 VCE = -5 V; IC = -1 A IC = -50 mA; VCE = -10 V; f = 100 MHz - - - - 300 300 250 160 - - - - - - 150 PARAMETER CONDITIONS MIN.
PMEM4010PD
TYP. - - - - - - - - - - - - 300 - -
MAX. -100 -50 -100 -100 - 800 - - -140 -170 -310 -1.1 <340 -1 -
UNIT
nA A nA nA
mV mV mV V m V MHz
Schottky barrier diode VF continuous forward voltage IF = 10 mA; note 1 IF = 100 mA; note 1 IF = 1000 mA; see Fig.7; note 1 IR reverse current VR = 5 V; note 1 VR = 8 V; note 1 VR = 15 V; see Fig.8; note 1 Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.9 - - - - - - - 240 300 480 5 7 10 19 270 350 550 10 20 50 25 mV mV mV A A A pF
2002 Oct 28
4
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
PMEM4010PD
handbook, halfpage
1200
MHC088
hFE 1000
(1)
handbook, halfpage
-10
MHC089
VBE (V)
800
600
(2)
-1
(1) (2)
400
(3) (3)
200 -10-1 -10-1
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
-1
-10
-102
-103 -104 IC (mA)
PNP transistor; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
PNP transistor; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
-103 handbook, halfpage VCEsat (mV)
MHC090
102 handbook, halfpage RCEsat ()
MHC091
-102
10
(1)
-10
1
(2) (3) (1)
(2) (3)
-1 -1
-10
-102
-103
IC (mA)
-104
10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
PNP transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
PNP transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of collector current; typical values.
2002 Oct 28
5
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
PMEM4010PD
handbook, halfpage
300 fT (MHz) 250
MHC092
103 handbook, halfpage IF (mA) 102
MHC311
200
(1) (2) (3)
150
10
100 1 50 10-1
0 0
-200
-400
-600
-800 -1000 IC (mA)
0
0.2
0.4
VF (V)
0.6
PNP transistor; VCE = -10 V.
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current.
Fig.7
Forward current as a function of forward voltage; typical values.
105 handbook, halfpage IR (A)
(1)
MHC312
handbook, halfpage
80
MHC313
Cd (pF) 60
104
103
(2)
40 102
(3)
20 10
1
0
5
10
15
20 VR (V)
25
0 0 5 10 15 VR (V) 20
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Schottky barrier diode; f = 1 MHz; Tamb = 25 C.
Fig.8
Reverse current as a function of reverse voltage; typical values.
Fig.9
Diode capacitance as a function of reverse voltage; typical values.
2002 Oct 28
6
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
APPLICATION INFORMATION
PMEM4010PD
handbook, halfpage handbook, halfpage
VCC IN
Vin
Vout
CONTROLLER
MGU866 MGU867
Fig.10 DC/DC convertor.
Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode.
2002 Oct 28
7
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
PACKAGE OUTLINE
PMEM4010PD
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2002 Oct 28
8
NXP Semiconductors
Product data sheet
PNP transistor/Schottky diode module
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PMEM4010PD
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2002 Oct 28
9
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp10 Date of release: 2002 Oct 28 Document order number: 9397 750 10211

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